425 citations · 696 across the 16 of their papers we have counts for
17 papers
Atomic layer etching of InGaAs using sequential exposures of atomic hydrogen and oxygen gas
Mete M. Bayrak, Anthony J. Ardizzi, Sadhvikas Addamane +2
The high frequency performance and yield of III-V semiconductor devices such as InP HEMTs is negatively impacted by subsurface etch damage and non-uniform etch depth over the wafer…
Valleytronics and negative differential resistance in cubic boron nitride: a first-principles study
Benjamin Hatanpää, Austin J. Minnich
Cubic boron nitride (c-BN) is an ultrawide-bandgap semiconductor of significant interest for high-frequency and high-power electronics applications owing to its high saturation dri…
Hot electron diffusion, microwave noise, and piezoresistivity in Si from first principles
Benjamin Hatanpää, Austin J. Minnich
Ab-initio calculations of charge transport properties in materials without adjustable parameters have provided microscopic insights into electron-phonon interactions which govern c…
Charge transport in BAs and the role of two-phonon scattering
Iretomiwa Esho, Austin J. Minnich
The semiconductor BAs has drawn significant interest due to experimental reports of simultaneous high thermal conductivity and ambipolar charge mobility. The \textit{ab~initio} pre…
Quantum Computation of Frequency-Domain Molecular Response Properties Using a Three-Qubit iToffoli Gate
Shi-Ning Sun, Brian Marinelli, Jin Ming Koh +7
The quantum computation of molecular response properties on near-term quantum hardware is a topic of significant interest. While computing time-domain response properties is in pri…
Transport and noise of hot electrons in GaAs using a semi-analytical model of two-phonon polar optical phonon scattering
Jiace Sun, Austin J. Minnich
Recent ab-initio studies of electron transport in GaAs have reported that electron-phonon (e-ph) interactions beyond the lowest order play a fundamental role in charge transport an…