2.3k citations · 4.3k across the 6 of their papers we have counts for
6 papers
Strain-tunable inter-valley scattering defines universal mobility enhancement in n- and p-type 2D TMDs
Sheikh Mohd Ta-Seen Afrid, He Lin Zhao, Arend M. van der Zande +1
Strain fundamentally alters carrier transport in semiconductors by modifying their band structure and scattering pathways. In transition-metal dichalcogenides (TMDs), an emerging c…
Strain-induced Moiré Reconstruction and Memorization in Two-Dimensional Materials without Twist
Nazmul Hasan, Tara Peña, Aditya Dey +7
Two-dimensional (2D) materials with a twist between layers exhibit a moiré interference pattern with larger periodicity than any of the constituent layer unit cells. In these syste…
Measurement of the optical dielectric function of transition metal dichalcogenide monolayers: MoS2, MoSe2, WS2 and WSe2
Yilei Li, Alexey Chernikov, Xian Zhang +7
We report a determination of the complex in-plane dielectric function of monolayers of four transition metal dichalcogenides: MoS2, MoSe2, WS2 and WSe2, for photon energies from 1.…
Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe2
Yilei Li, Jonathan Ludwig, Tony Low +12
We have measured circularly polarized photoluminescence in monolayer MoSe2 under perpendicular magnetic fields up to 10 T. At low doping densities, the neutral and charged excitons…
Atomically thin p-n junctions with van der Waals heterointerfaces
Chul-Ho Lee, Gwan-Hyoung Lee, Arend M. van der Zande +10
Semiconductor p-n junctions are essential building blocks for modern electronics and optoelectronics. In conventional semiconductors, a p-n junction produces depletion regions of f…
Graphene growth on h-BN by Molecular Beam Epitaxy
Jorge M. Garcia, Ulrich Wurstbauer, Antonio Levy +10
The growth of single layer graphene nanometer size domains by solid carbon source molecular beam epitaxy on hexagonal boron nitride (h-BN) flakes is demonstrated. Formation of sing…