2 papers
cond-mat.str-el2026
Magnetoresistivity in the Antiferromagnetic Hubbard Model
Joel Bobadilla, Marcelo J. Rozenberg, Alberto Camjayi
We investigate the magnetotransport properties of the half-filled antiferromagnetic (AF) one-band Hubbard model under an external magnetic field using the single-site dynamical mea…
cond-mat.str-el2024
Charge gain via solid-state gating of an oxide Mott system
Lishai Shoham, Itai Silber, Gal Tuvia +10
The modulation of channel conductance in field-effect transistors (FETs) via metal-oxide-semiconductor (MOS) structures has revolutionized information processing and storage. Howev…