Wafer-scale MoS2 and HZO-based Ferroelectric Field Effect Transistors with 4.4 V Memory Window for Back-End Compatible Multibit Memory

Manisha Rajput, Farhan Ahmed Siddique, Chung-Che Huang +2

Ferroelectric field-effect transistors (FeFETs) with low-power operation and non-volatile data retention enabled by stable ferroelectric polarization switching, have emerged as pro…