Complete Au-free Metallization Platform for UWBG Al${}_{0.65}$Ga${}_{0.35}$N channel MOS-HEMTs using Ti/Al/Ti Ohmic Contacts and Refractory TiN/Pt Gates

Mafruda Rahman, Dharun Manoharan, Tariq Jamil +8

Au-free ohmic contacts and refractory gate stacks are critical for integrating ultra-wide-bandgap (UWBG) Al-rich AlGaN transistors with Si-CMOS technology. In this work, we demonst…