309 citations · 2.4k across the 48 of their papers we have counts for
5 papers · 1 filter
How much gallium do we need for a p-type Cu(In,Ga)Se2?
Omar Ramírez, Evandro Martin Lanzoni, Ricardo G. Poeira +4
Doping in the chalcopyrite Cu(In,Ga)Se2 is determined by intrinsic point defects. In the ternary CuInSe2, both N-type and P-type conductivity can be obtained depending on the growt…
Electrical barriers and their elimination by tuning (Zn,Mg)O composition in Cu(In,Ga)S2: Systematic approach to achieve over 14% power conversion efficiency
Mohit Sood, Poorani Gnanasambandan, Damilola Adeleye +4
Traditional CdS buffer layer in selenium-free Cu(In,Ga)S2 solar cells leads to reduced open-circuit voltage because of a negative conduction band offset at the Cu(In,Ga)S2/CdS inte…
Broadband wavelength-selective isotype heterojunction n+-ZnO/n-Si photodetector with variable polarity
Georgios Chatzigiannakis, Angelina Jaros, Renaud Leturcq +4
An isotype heterojunction n+-ZnO/n-Si photodetector is developed, demonstrating wavelength-selective or broadband operation, depending on the applied bias voltage. Additionally, at…
Detection mechanism in highly sensitive ZnO nanowires network gas sensors
Nohora Caicedo, Renaud Leturcq, Jean-Pierre Raskin +2
Metal-oxide nanowires are showing a great interest in the domain of gas sensing due to their large response even at a low temperature, enabling low-power gas sensors. However their…
Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy
Chloé Rolland, Philippe Caroff, Christophe Coinon +2
We have investigated in-situ Si doping of InAs nanowires grown by molecular beam epitaxy from gold seeds. The effectiveness of n-type doping is confirmed by electrical measurements…