activity
20122023
most citedDelocalised oxygen as the origin of two-level defects in Josephson junctions

43 citations · 45 across the 5 of their papers we have counts for

collaborators

5 papers

physics.app-ph20231 cited

Intrinsic defect engineering of CVD grown monolayer MoS for tuneable functional nanodevices

Irfan H. Abidi, Sindhu Priya Giridhar, Jonathan O. Tollerud +14

Defects in atomically thin materials can drive new functionalities and expand applications to multifunctional systems that are monolithically integrated. An ability to control form…

cond-mat.mes-hall2023

All-electron hyperfine coupling of Si-, Ge- and Sn-vacancy defects in diamond

Akib Karim, Harish H. Vallabhapurapu, Chris Adambukulam +3

Colour centres in diamond are attractive candidates for numerous quantum applications due to their good optical properties and long spin coherence times. They also provide access t…

cond-mat.mes-hall20161 cited

Ab initio calculation of energy levels for phosphorus donors in silicon

J. S. Smith, A. Budi, M. C. Per +5

The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we c…

cond-mat.str-el2014

The interplay between the structural and magnetic properties of vanadium dioxide from first principles

Jamie Booth, Daniel Drumm, Phil Casey +2

The effects of the spin and lattice degrees of freedom on the electronic structure of M1 vanadium dioxide are explored using a quasiparticle description. Contraction of the inter-v…

cond-mat.mes-hall201243 cited

Delocalised oxygen as the origin of two-level defects in Josephson junctions

Timothy C. DuBois, Manolo C. Per, Salvy P. Russo +1

One of the key problems facing superconducting qubits and other Josephson junction devices is the decohering effects of bi-stable material defects. Although a variety of phenomenol…