Displacement-Field-Induced Ionization of Defect States in High-Quality hBN

Ilia Begichev, Daria Belotcerkovtceva, Iakov Reznikov +10

Encapsulation of two-dimensional (2D) materials with hexagonal boron nitride (hBN) is widely used to fabricate ultraclean van der Waals (vdW) heterostructures for optoelectronic an…