collaborators

1 paper

cond-mat.mes-hall2026

Cooperative STT and SOT switching in perpendicular magnetic tunnel junctions: Role of the pulse-end magnetization state

Zeyi Zhu, Ding Ma, Kai Zhang +11

Spin--orbit torque MRAM (SOT-MRAM) is a leading candidate for next-generation nonvolatile memory, offering high speed, endurance, and architectural compatibility. However, in conve…