activity
20242026
collaborators

5 papers

quant-ph2026

On-chip Parametric Amplification in a Double Quantum Dots Circuit

Yong-Qiang Xu, Rui Wu, Si-Si Gu +8

In microwave-based quantum circuits, including double quantum dots (DQDs), superconducting qubits and spin qubits, parametric amplifiers are indispensable in achieving high-fidelit…

cond-mat.mes-hall2026

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures

Jingrui Ma, Yuan Kang, Rui Wu +11

Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior…

cond-mat.mes-hall2025

The cell-centered Finite-Volume self-consistent approach for heterostructures: 1D electron gas at the Si-SiO2 interface

Vahid Mosallanejad, Haiou Li, Gang Cao +3

Achieving self-consistent convergence with the conventional effective-mass approach at ultra-low temperatures (below ) is a challenging task, which mostly lies in the discon…

cond-mat.mes-hall2024

Revealing spin-flip two-level systems using ultra-thin film superconducting resonators

Zi-Qing Huang, Shu-Kun Ye, Yong-Qiang Xu +8

Material disorders are one of the major sources of noise and loss in solid-state quantum devices, whose behaviors are often modeled as two-level systems (TLSs) formed by charge tun…

cond-mat.mes-hall2024

High Mobility SiGe/Ge 2DHG Heterostructure Quantum Wells for Semiconductor Hole Spin Qubits

Zhenzhen Kong, Zonghu Li, Yuchen Zhou +11

Strong spin-orbit coupling and relatively weak hyperfine interactions make germanium hole spin qubits a promising candidate for semiconductor quantum processors. The two-dimensiona…