2 papers
physics.ins-det2026
Stability of Charge Collection Efficiency and Time Resolution in 4H-SiC PIN Diodes Under X-ray Irradiation
Jiaqi Zhou, Sen Zhao, Xiyuan Zhang +6
This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial verti…
physics.ins-det2025
The study of 4H-SiC LGAD after proton radiation
Sen Zhao, Jiaqi Zhou, Chenxi Fu +7
Silicon carbide (SiC) is a promising material for radiation monitoring in harsh environments, due to its low dark current, high breakdown voltage, high thermal conductivity, and ra…