Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)

Le Thuy Thanh Giang, C. Bougerol, H. Mariette +1

Diffusion-enhanced and desorption-limited growth regimes of Ga-assisted GaAs nanowires were identified. In the latter regime, the number of vertical NWs with a narrow length distri…