collaborators

8 papers

cond-mat.mes-hall2026

Increasing valley splitting in Si/SiGe by practically achievable heterostructure profiles

Lukas Cvitkovich, Peter Stano, Dominique Bougeard +2

Silicon spin qubits are marred by the valley degeneracy of the conduction band. In a nanodevice, the degeneracy is lifted by interfaces and alloy disorder, but the arising valley s…

cond-mat.mes-hall2026

Scaling of silicon spin qubits under correlated noise

Juan S. Rojas-Arias, Leon C. Camenzind, Yi-Hsien Wu +8

The path to fault-tolerant quantum computing hinges on hardware that scales while remaining compatible with quantum error correction (QEC). Silicon spin qubits are a leading hardwa…

cond-mat.mes-hall2026

Inferring charge-noise source locations from correlations in spin qubits

Juan S. Rojas-Arias, Akito Noiri, Jun Yoneda +7

We investigate low-frequency noise in a spin-qubit device made in isotopically purified Si/Si-Ge. Observing sizable cross-correlations among energy fluctuations of different qubits…

cond-mat.mes-hall2025

In-situ control of hole-spin driving mechanisms

Simon Geyer, Rafael S. Eggli, Carlos dos Santos +6

Hole-spin qubits enable fast, all-electrical spin manipulation through electric-dipole spin resonance (EDSR), arising from two microscopic mechanisms rooted in their intrinsically…

quant-ph2025

Noise cross-correlations from single-shot measurements

Juan S. Rojas-Arias, Peter Stano, Yi-Hsien Wu +3

We introduce a novel method that we call Single-Shot Cross-Spectroscopy (SSCS), for extracting the auto- and cross-power spectral densities of dephasing noise of a qubit pair. The…

quant-ph2025

Spin-qubit readout analysis based on a hidden Markov model

Maria Spethmann, Peter Stano, Daniel Loss

Across most qubit platforms, the readout fidelities do not keep up with the gate fidelities, and new ways to increase the readout fidelities are searched for. For semiconductor spi…