most citedOn the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

10 citations · 10 across the 1 of their papers we have counts for

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physics.app-ph2020★ 10 cited

On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

P. Fiorenza, E. Schilirò, F. Giannazzo +4

The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemicondu…