collaborators

6 papers

cond-mat.other2026

Gate-Drain Leakage Enhanced by Drain-Induced Dielectric Barrier Lowering in Gate-All-Around Field Effect Transistors

Juan P. Mendez, Coleman Cariker, Michael Titze +2

Gate-All-Around Field-Effect Transistors (GAAFETs), now entering high-volume production as successors to fin field-effect transistor technology, are enabling continued scaling and…

cond-mat.other2026

Predictive first-principles simulations for co-designing next-generation energy-efficient AI systems

Denis Mamaluy, Md Rahatul Islam Udoy, Juan P. Mendez +3

In modern generative-AI workloads, matrix-vector/matrix-matrix multiplications (\emph{MatMul}) dominate the compute and energy cost. Achieving dramatic reductions in energy per tok…

cond-mat.supr-con2025

Analog-to-Digital Converter Based on Voltage-controlled Superconducting Device

Md Mazharul Islam, Connor A. Good, Diego Ferrer +5

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra energy efficient data conversion architectures that remain function…

cs.ET2025

Reimagining Voltage-Controlled Cryogenic Boolean Logic Paradigm with Quantum-Enhanced Josephson Junction FETs

Md Mazharul Islam, Diego Ferrer, Shamiul Alam +4

The growing demand for ultra low power computing and the emergence of quantum technologies have intensified interest in cryogenic electronics, particularly superconducting devices.…

cond-mat.mes-hall2025

Quantum charge sensing using a semiconductor device based on -layer tunnel junctions

Juan P. Mendez, Denis Mamaluy

We report a nanoscale device concept based on a highly doped -layer tunnel junction embedded in a semiconductor for charge sensing. Recent advances in Atomic Precision Advanced…

cond-mat.mtrl-sci2025

Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects

W. Pan, K. R. Sapkota, P. Lu +13

In this article, we present results of our recent work of epitaxially-grown aluminum (epi-Al) on antimonide heterostructures, where the epi-Al thin film is grown at either room tem…