collaborators

1 paper

cond-mat1995

Re-entrant Layer-by-Layer Etching of GaAs(001)

T. Kaneko, P. Šmilauer, B. A. Joyce +2

We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr used to etch G…