2 papers
physics.ins-det1997
Preliminary Results for LP VPE X-Ray Detectors
R. Adams, R. Bates, C. Da Via +5
Thick epitaxial layers have been grown using Low Pressure Vapour Phase Epitaxy techniques with low free carrier concentrations . This type of material is attractive as a medium for…
physics.ins-det1997
Characterisation of low pressure VPE GaAs diodes before and after 24 GeV/c proton irradiation
R. L. Bates, C. Da'Via, V. O'Shea +3
GaAs Schottky diode detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised before and after a ~cm…