collaborators

6 papers

physics.ins-det1999

Monitoring the Stability of the ALEPH Vertex Detector

G. Sguazzoni

The ALEPH Silicon Vertex Detector features an optical fibre laser system to monitor its mechanical stability. The operating principle and the general performance of the laser syste…

physics.ins-det1997

Preliminary Results for LP VPE X-Ray Detectors

R. Adams, R. Bates, C. Da Via +5

Thick epitaxial layers have been grown using Low Pressure Vapour Phase Epitaxy techniques with low free carrier concentrations . This type of material is attractive as a medium for…

physics.ins-det1997

Radiation Induced Damage in GaAs Particle Detectors

R. L. Bates, C. Da'Via, V. O'Shea +3

The motivation for investigating the use of GaAs as a material for detecting particles in experiments for High Energy Physics (HEP) arose from its perceived resistance to radiation…

physics.ins-det1997

Recent results on GaAs detectors - 137

R. L. Bates, M. Campbell, C. Da'Via +4

The present understanding of the charge collection in GaAs detectors with respect to the materials used and its processing are discussed. The radiation induced degradation of the c…

physics.ins-det1997

The effects of radiation on Gallium Arsenide radiation detectors

R. L. Bates, C. Da'Via, S. D'Auria +3

Semi-insulating, undoped, Liquid Encapsulated Czochralski (SI-U LEC) GaAs detectors have been irradiated with 1MeV neutrons, 24GeV/c protons, and 300MeV/c pions. The maximum fluenc…

physics.ins-det1997

Characterisation of low pressure VPE GaAs diodes before and after 24 GeV/c proton irradiation

R. L. Bates, C. Da'Via, V. O'Shea +3

GaAs Schottky diode detectors have been fabricated upon Low Pressure Vapour Phase Epitaxial GaAs. The devices were characterised before and after a ~cm…