8 papers
Transport properties of quantum dots with hard walls
A. Fuhrer, S. Luescher, T. Heinzel +3
Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to ge…
Analysis of the Metallic Phase of Two-Dimensional Holes in SiGe in Terms of Temperature Dependent Screening
V. Senz, T. Ihn, T. Heinzel +4
We find that temperature dependent screening can quantitatively explain the metallic behaviour of the resistivity on the metallic side of the so-called metal-insulator transition i…
Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells
V. Senz, T. Heinzel, T. Ihn +4
Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak lo…
Shifting a Quantum Wire through a Disordered Crystal: Observation of Conductance Fluctuations in Real Space
T. Heinzel, G. Salis, R. Held +4
A quantum wire is spatially displaced by suitable electric fields with respect to the scatterers inside a semiconductor crystal. As a function of the wire position, the low-tempera…
Non-Gaussian distribution of nearest-neighbour Coulomb peak spacings in metallic single electron transistors
M. Furlan, T. Heinzel, B. Jeanneret +2
The distribution of nearest-neighbour spacings of Coulomb blockade oscillation peaks in normal conducting aluminum single electron transistors is found to be non-Gaussian. A pronou…
Mode Spectroscopy and Level Coupling in Ballistic Electron Waveguides
G. Salis, T. Heinzel, K. Ensslin +4
A tunable quantum point contact with modes occupied in both transverse directions is studied by magnetotransport experiments. We use conductance quantization of the one-dimensional…