2 papers
cond-mat.mes-hall2001
Electronic properties of antidot lattices fabricated by atomic force lithography
A. Dorn, A. Fuhrer, T. Ihn +4
Antidot lattices were fabricated by atomic force lithography using local oxidation. High quality finite 20 x20 lattices are demonstrated with periods of 300 nm. The low temperature…
cond-mat.mes-hall1999
In-plane gate single-electron transistor in Ga[Al]As fabricated by scanning probe lithography
S. Luescher, A. Fuhrer, R. Held +3
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the bo…