most citedUnconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C

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cond-mat.mtrl-sci2002★ 224 cited

Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C

N. Theodoropoulou, A. F. Hebard, M. E. Overberg +4

Ion implantation of Mn ions into hole-doped GaP has been used to induce ferromagnetic behavior above room temperature for optimized Mn concentrations near 3 at.%. The magnetism is…