4 papers
Laterally-doped heterostructures for III-N lasing devices
S. M. Komirenko, K. W. Kim, V. A. Kochelap +1
To achieve a high-density electron-hole plasma in group-III nitrides for efficient light emission, we propose a planar two-dimensional (2D) p-i-n structure that can be created in s…
Enhancement of hole injection for nitride-based light-emitting devices
S. M. Komirenko, K. W. Kim, V. A. Kochelap +1
A novel device design is proposed for a strong enhancement of hole injection current in nitride-based light-emitting heterostructures. Preliminary calculations show orders of magni…
Applicability of Fermi golden rule and possibility of low-field runaway transport in nitrides
S. M. Komirenko, K. W. Kim, M. A. Stroscio +1
In order to justify applicability of the standard approach of perturbation theory for the description of transport phenomena in wide-band polar semiconductors with strong electron-…
Cerenkov generation of high-frequency confined acoustic phonons in quantum wells
S. M. Komirenko, K. W. Kim, A. A. Demidenko +2
We analyze the Cerenkov emission of high-frequency confined acoustic phonons by drifting electrons in a quantum well. We find that the electron drift can cause strong phonon amplif…