most citedFirst-principles theoretical evaluation of crystalline zirconia and hafnia as gate oxides for Si microelectronics

175 citations · 175 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2002★ 175 cited

First-principles theoretical evaluation of crystalline zirconia and hafnia as gate oxides for Si microelectronics

V. Fiorentini, G. Gulleri

Parameters determining the performance of the crystalline oxides zirconia (ZrO_2) and hafnia (HfO_2) as gate insulators in nanometric Si electronics are estimated via ab initio cal…