activity
19932002
most citedGas molecule adsorption in carbon nanotubes and nanotube bundles

1.2k citations · 1.7k across the 6 of their papers we have counts for

collaborators

12 papers

cond-mat.mtrl-sci2002★ 82 cited

Quantum transport properties of ultrathin silver nanowires

Jijun Zhao, Buia Calin, Jie Han +1

The quantum transport properties of the ultrathin silver nanowires are investigated. For a perfect crystalline nanowire with four atoms per unit cell, three conduction channels are…

cond-mat.mtrl-sci2002★ 110 cited

Binding energies and electronic structures of adsorbed titanium chains on carbon nanotubes

Chih-Kai Yang, Jijun Zhao, Jian Ping Lu

We have studied the binding energies and electronic structures of metal (Ti, Al, Au) chains adsorbed on single-wall carbon nanotubes (SWNT) using first principles methods. Our calc…

cond-mat.mes-hall2002★ 40 cited

Quantum Interference Effects in Electronic Transport through Nanotube Contacts

Calin Buia, Alper Buldum, Jian Ping Lu

Quantum interference has dramatic effects on electronic transport through nanotube contacts. In optimal configuration the intertube conductance can approach that of a perfect nanot…

cond-mat.mtrl-sci2001★ 205 cited

Work functions of pristine and alkali-metal intercalated carbon nanotubes and bundles

Jijun Zhao, Jie Han, Jian Ping Lu

The work functions (WF) of single-walled carbon nanotubes and bundles are studied using first principles methods. For individual metallic tubes, the WF is independent of the chiral…

cond-mat.mtrl-sci2001★ 1.2k cited

Gas molecule adsorption in carbon nanotubes and nanotube bundles

Jijun Zhao, Alper Buldum, Jie Han +1

We studied various gas molecules (NO, O, NH, N, CO, CH, HO, H, Ar) on single-walled carbon nanotubes (SWNTs) and bundles using first principles meth…

cond-mat.mtrl-sci2001★ 59 cited

Pressure-induced metallization in solid boron

Jijun Zhao, Jian Ping Lu

Different phases of solid boron under high pressure are studied by first principles calculations. The -B structure is found to be stable up to 270 GPa. Its semiconductor…