75 citations · 91 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2004★ 75 cited
Vacancy complexes with oversized impurities in Si and Ge
H. Hoehler, N. Atodiresei, K. Schroeder +2
In this paper we examine the electronic and geometrical structure of impurity-vacancy complexes in Si and Ge. Already Watkins suggested that in Si the pairing of Sn with the vacanc…
cond-mat.mtrl-sci2004★ 16 cited
Cd-vacancy and Cd-interstitial complexes in Si and Ge
H. Hoehler, N. Atodiresei, K. Schroeder +2
The electrical field gradient (EFG), measured e.g. in perturbed angular correlation (PAC) experiments, gives particularly useful information about the interaction of probe atoms li…