most citedMulti-Dot Floating-Gates for Nonvolatile Semiconductor Memories - Their Ion Beam Synthesis and Morphology

46 citations · 46 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mtrl-sci2004★ 46 cited

Multi-Dot Floating-Gates for Nonvolatile Semiconductor Memories - Their Ion Beam Synthesis and Morphology

T. Müller, C. Bonafos, K. -H. Heinig +9

Scalability and performance of current flash memories can be improved substantially by replacing the floating poly-Si gate by a layer of Si dots. This multi-dot layer can be fabric…