A Study of Apparent Symmetry Breakdown in Perovskite Oxide-based Symmetric RRAM Devices

X. Chen, J. Strozier, N. J. Wu +2

A new model of a symmetric two-terminal non-volatile RRAM device based on Perovskite oxide thin film materials, specifically Pr1-xCaxMnO3 (PCMO), is proposed and analyzed. The mode…