6 papers
Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors
T. Ferrus, R. George, C. H. W. Barnes +1
We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at…
Fermi-liquid behaviour of the low-density 2D hole gas in GaAs/AlGaAs heterostructure at large values of r_s
Y. Y. Proskuryakov, A. K. Savchenko, S. S. Safonov +3
We examine the validity of the Fermi-liquid description of the dilute 2D hole gas in the crossover from 'metallic'-to-'insulating' behaviour of R(T).It has been established that, a…
On the metallic behaviour in dilute two-dimensional systems
A. R. Hamilton, M. Y. Simmons, M. Pepper +1
We have studied the metallic behaviour in low density GaAs hole systems, and Si electron systems, close to the apparent two-dimensional metal-insulator transition. Two observations…
Experimental Evidence for Coulomb Charging Effects in an Open Quantum Dot at Zero Magnetic Field
C. -T. Liang, M. Y. Simmons, C. G. Smith +3
We have measured the low-temperature transport properties of an open quantum dot formed in a clean one-dimensional channel. For the first time, at zero magnetic field, continuous a…
Resonant transmission through an open quantum dot
C. -T. Liang, I. M. Castleton, J. E. F. Frost +5
We have measured the low-temperature transport properties of a quantum dot formed in a one-dimensional channel. In zero magnetic field this device shows quantized ballistic conduct…
Fractional Quantum Hall Effect in Bilayer Two Dimensional Hole Gas Systems
A. R. Hamilton, M. Y. Simmons, F. M. Bolton +5
We have studied the fractional and integer quantum Hall effect in high mobility double layer 2D hole gas systems. The large hole effective mass inhibits tunneling, allowing us to i…