Mechanism of recrystallization process in epitaxial GaN under dynamic stress field - Atomistic origin of planar defect formation

C. R. Das, S. Dhara, H. C. Hsu +6

The mechanism of recrystallization in epitaxial (1000) GaN film, introduced by indentation technique, is probed by lattice dynamic studies using Raman spectroscopy. The recrystalli…