Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers

N. N. Klimov, D. A. Knyazev, O. E. Omel'yanovskii +3

We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2…