Katharina Lorenz

collaborators

5 papers

cond-mat.mtrl-sci2026

Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga $_{2}$ O $_{3}$ thin films

InÃªs Freitas, Ana Sofia Sousa, Duarte MagalhÃ£es Esteves +6

Gallium oxide (Ga $_{2}$ O $_{3}$ ) is a wide-bandgap semiconductor with exceptional electrical and optical properties, making it a promising material for optoelectronic and sensing applic…

cond-mat.mtrl-sci2026

Study on the Effect of Annealing on Ga $_{2}$ O $_{3}$ Thin Films Deposited on Silicon by RF Sputtering

Ana Sofia Sousa, Duarte M. Esteves, Tiago T. Robalo +3

Gallium oxide is an ultra-wide bandgap semiconductor with excellent opto-electronic properties, making it a highly promising material for a wide range of applications and devices.…

cond-mat.mtrl-sci2025

UV photodetectors and field-effect transistors based on $I^^{2}$ -Ga $_{2}$ O $_{3}$ nanomembranes produced by ion-beam-assisted exfoliation

Miguel Cardoso Pedro, Duarte MagalhÃ£es Esteves, Daniela Rodrigues Pereira +4

$I^^{2}$ -Ga $_{2}$ O $_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as…

cond-mat.mtrl-sci2025

Effect of Annealing on Al Diffusion and its Impact on the Properties of Ga $_{2}$ O $_{3}$ Thin Films Deposited on c-plane Sapphire by RF Sputtering

Ana Sofia Sousa, Duarte M. Esteves, Tiago T. Robalo +4

Gallium oxide is a wide-bandgap semiconductor which has been steadily growing in popularity due to its ultra-wide bandgap, suitability for harsh environments and distinctive opto-e…

cond-mat.mtrl-sci2025

Microtubes and nanomembranes by ion-beam-induced exfoliation of $I^^{2}$ -Ga $_{2}$ O $_{3}$

Duarte MagalhÃ£es Esteves, Ru He, Calliope Bazioti +8

This paper reports an innovative process to fabricate $I^^{2}$ -Ga $_{2}$ O $_{3}$ microtubes and nanomembranes based on ion implantation in (100)-oriented single-crystals. We show that, u…

Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga2​O3​ thin films

Study on the Effect of Annealing on Ga2​O3​ Thin Films Deposited on Silicon by RF Sputtering

UV photodetectors and field-effect transistors based on I^2-Ga2​O3​ nanomembranes produced by ion-beam-assisted exfoliation

Effect of Annealing on Al Diffusion and its Impact on the Properties of Ga2​O3​ Thin Films Deposited on c-plane Sapphire by RF Sputtering

Microtubes and nanomembranes by ion-beam-induced exfoliation of I^2-Ga2​O3​

Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga $_{2}$ O $_{3}$ thin films

Study on the Effect of Annealing on Ga $_{2}$ O $_{3}$ Thin Films Deposited on Silicon by RF Sputtering

UV photodetectors and field-effect transistors based on $I^^{2}$ -Ga $_{2}$ O $_{3}$ nanomembranes produced by ion-beam-assisted exfoliation

Effect of Annealing on Al Diffusion and its Impact on the Properties of Ga $_{2}$ O $_{3}$ Thin Films Deposited on c-plane Sapphire by RF Sputtering

Microtubes and nanomembranes by ion-beam-induced exfoliation of $I^^{2}$ -Ga $_{2}$ O $_{3}$