D. M. Esteves

collaborators

8 papers

cond-mat.mtrl-sci2026

Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga $_{2}$ O $_{3}$ thin films

InÃªs Freitas, Ana Sofia Sousa, Duarte MagalhÃ£es Esteves +6

Gallium oxide (Ga $_{2}$ O $_{3}$ ) is a wide-bandgap semiconductor with exceptional electrical and optical properties, making it a promising material for optoelectronic and sensing applic…

cond-mat.mtrl-sci2026

Au and Ag nanoparticles produced by ion implantation in single-crystalline $I^^{2}$ -Ga $_{2}$ O $_{3}$

Duarte MagalhÃ£es Esteves, Ana Sofia Sousa, InÃªs Freitas +5

This work reports the successful formation of Ag and Au nanoparticles in $I^^{2}$ -Ga $_{2}$ O $_{3}$ single-crystals by ion implantation and annealing at 550 Â°C. X-ray diffraction measuremen…

cond-mat.mtrl-sci2026

Anisotropic implantation damage build-up and crystal recovery in $I^^{2}$ -Ga $_{2}$ O $_{3}$

Duarte MagalhÃ£es Esteves, SÃ©rgio MagalhÃ£es, Ãngelo Rafael Granadeiro da Costa +2

The present work aims at investigating the defect accumulation and recovery dynamics in the inherently anisotropic $I^^{2}$ -Ga $_{2}$ O $_{3}$ lattice. A systematic Rutherford Backscattering…

cond-mat.mtrl-sci2026

Understanding the anisotropic response of $I^^{2}$ -Ga $_{2}$ O $_{3}$ to ion implantation

Duarte MagalhÃ£es Esteves, Ru He, SÃ©rgio MagalhÃ£es +8

While $I^^{2}$ -Ga $_{2}$ O $_{3}$ is considered a promising wide bandgap semiconductor, the impact of ion-induced defect formation and anisotropic elasticity remains poorly understood. Here,…

cond-mat.mtrl-sci2026

Study on the Effect of Annealing on Ga $_{2}$ O $_{3}$ Thin Films Deposited on Silicon by RF Sputtering

Ana Sofia Sousa, Duarte M. Esteves, Tiago T. Robalo +3

Gallium oxide is an ultra-wide bandgap semiconductor with excellent opto-electronic properties, making it a highly promising material for a wide range of applications and devices.…

cond-mat.mtrl-sci2025

UV photodetectors and field-effect transistors based on $I^^{2}$ -Ga $_{2}$ O $_{3}$ nanomembranes produced by ion-beam-assisted exfoliation

Miguel Cardoso Pedro, Duarte MagalhÃ£es Esteves, Daniela Rodrigues Pereira +4

$I^^{2}$ -Ga $_{2}$ O $_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as…

Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga2​O3​ thin films

Au and Ag nanoparticles produced by ion implantation in single-crystalline I^2-Ga2​O3​

Anisotropic implantation damage build-up and crystal recovery in I^2-Ga2​O3​

Understanding the anisotropic response of I^2-Ga2​O3​ to ion implantation

Study on the Effect of Annealing on Ga2​O3​ Thin Films Deposited on Silicon by RF Sputtering

UV photodetectors and field-effect transistors based on I^2-Ga2​O3​ nanomembranes produced by ion-beam-assisted exfoliation

Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga $_{2}$ O $_{3}$ thin films

Au and Ag nanoparticles produced by ion implantation in single-crystalline $I^^{2}$ -Ga $_{2}$ O $_{3}$

Anisotropic implantation damage build-up and crystal recovery in $I^^{2}$ -Ga $_{2}$ O $_{3}$

Understanding the anisotropic response of $I^^{2}$ -Ga $_{2}$ O $_{3}$ to ion implantation

Study on the Effect of Annealing on Ga $_{2}$ O $_{3}$ Thin Films Deposited on Silicon by RF Sputtering

UV photodetectors and field-effect transistors based on $I^^{2}$ -Ga $_{2}$ O $_{3}$ nanomembranes produced by ion-beam-assisted exfoliation