most citedGraphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates

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cond-mat.mtrl-sci2009★ 153 cited

Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates

S. Tongay, T. Schumann, A. F. Hebard

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H…