9 citations · 15 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2010★ 9 cited
Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance
Yunfei Gao, Tony Low, Mark S. Lundstrom +1
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor (spinFET) is implemented in a widely used simulator nanoMOS. This method includes the…
cond-mat.mes-hall2010★ 6 cited
p-i-n Tunnel FETs vs. n-i-n MOSFETs: Performance Comparison from Devices to Circuits
Yunfei Gao, Siyuranga O. Koswatta, Dmitri E. Nikonov +1
The band-to-band tunneling transistors have some performance advantages over the conventional MOSFETs due to the <60mV/dec sub-threshold slope. In this paper, carbon nanotubes are…