3 papers
cond-mat.mtrl-sci2010
Formation of Epitaxial Graphene on SiC(0001) using Vacuum or Argon Environments
Luxmi, N. Srivastava, R. M. Feenstra +1
The formation of graphene on the (0001) surface of SiC (the Si-face) is studied by atomic force microscopy, low-energy electron microscopy, and scanning tunneling microscopy/spectr…
cond-mat.mtrl-sci2010
Thickness monitoring of graphene on SiC using low-energy electron diffraction
P. J. Fisher, Luxmi, N. Srivastava +2
The formation of epitaxial graphene on SiC is monitored in-situ using low-energy electron diffraction (LEED). The possibility of using LEED as an in-situ thickness monitor of the g…
cond-mat.mtrl-sci2009
Morphology of Graphene on SiC(000-1) Surfaces
Luxmi, P. J. Fisher, N. Srivastava +5
Graphene is formed on SiC(000-1) surfaces (the so-called C-face of the crystal) by annealing in vacuum, with the resulting films characterized by atomic force microscopy, Auger ele…