most citedO-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors

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cond-mat.mtrl-sci2010★ 444 cited

O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors

Byungki Ryu, Hyeon-Kyun Noh, Eun-Ae Choi +1

We find that O-vacancy (Vo) acts as a hole trap and play a role in negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors. Photo-excited holes…