3 papers
cond-mat.mes-hall2010
A New High Voltage 4H-SiC Lateral Dual Sidewall Schottky (LDSS) Rectifier: Theoretical Investigation and Analysis
M. Jagadesh Kumar, C. Linga Reddy
In this paper, we report a new 4H-SiC Lateral Dual Sidewall Schottky (LDSS) rectifier on a highly doped drift layer consisting of a high-barrier sidewall Schottky contact on top of…
cond-mat.mes-hall2010
Realizing Wide Bandgap P-SiC-emitter Lateral Heterojunction Bipolar Transistors with low collectoremitter offset voltage and high current gain - A novel proposal using numerical simulation
M. Jagadesh Kumar, C. Linga Reddy
We report a novel method to reduce the collector-emitter offset-voltage of the wide bandgap SiC-P-emitter lateral HBTs using a dual-bandgap emitter. In our approach, the collector-…
cond-mat.mtrl-sci2010
Silicon-On-Insulator Lateral Dual Sidewall Schottky (SOI-LDSS) Concept for Improved Rectifier Performance: A Two-Dimensional Simulation Study
M. Jagadesh Kumar, C. Linga Reddy
In this paper, we demonstrate that the performance of silicon Schottky rectifiers on SOI can be significantly improved using a Lateral Dual Sidewall Schottky (LDSS) concept. Our re…