4 papers
A New High Voltage 4H-SiC Lateral Dual Sidewall Schottky (LDSS) Rectifier: Theoretical Investigation and Analysis
M. Jagadesh Kumar, C. Linga Reddy
In this paper, we report a new 4H-SiC Lateral Dual Sidewall Schottky (LDSS) rectifier on a highly doped drift layer consisting of a high-barrier sidewall Schottky contact on top of…
Shielded Ohmic Contact (ShOC) Rectifier: A New Metal-Semiconductor Device with Excellent Forward and Reverse Characteristics
M. Jagadesh Kumar
We report a new structure, called the Shielded Ohmic Contact (ShOC) rectifier which utilizes trenches filled with a high barrier metal to shield an Ohmic contact during the reverse…
A Stepped Oxide Hetero-Material Gate Trench Power MOSFET for Improved Performance
Raghvendra S. Saxena, M. Jagadesh Kumar
In this work, we propose a new Stepped Oxide Hetero-Material Trench (SOHMT) power MOSFET with three sections in the trench gate (an N+ poly gate sandwiched between two P+ poly gate…
A New Strained-Silicon Channel Trench-gate Power MOSFET: Design and Analysis
Raghvendra S. Saxena, M. Jagadesh Kumar
In this paper, we propose a new trench power MOSFET with strained Si channel that provides lower on resistance than the conventional trench MOSFET. Using a 20% Ge mole fraction in…