18 citations · 35 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2010★ 17 cited
Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED
L. V. Arapkina, V. A. Yuryev, K. V. Chizh +3
Pre-growth preparation of the Si(001) clean surface is a key process for Ge/Si UHV MBE. It usually includes pre-cleaning by liquid etchants, thermal pretreatment in UHV and removal…
cond-mat.mtrl-sci2010★ 18 cited
STM and RHEED study of the Si(001)-c(8x8) surface
Larisa V. Arapkina, Vladimir M. Shevlyuga, Vladimir A. Yuryev
The Si(001) surface deoxidized by short annealing at T~925C in the ultrahigh vacuum molecular beam epitaxy chamber has been in situ investigated by high resolution scanning tunnell…