17 citations · 17 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2010★ 17 cited
Electron transport properties in high-purity Ge down to cryogenic temperatures
V. Aubry-Fortuna, P. Dollfus
Electron transport in Ge at various temperatures down to 20 mK has been investigated using particle Monte Carlo simulation taking into account ionized impurity and inelastic phonon…
cond-mat.other2004
Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation
V. Aubry-Fortuna, P. Dollfus, S. Galdin-Retailleau
Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-channel strained Si/ Si1-xGex MOS structures. The influence of the strain in the Si layer…