most citedHigh growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

49 citations · 49 across the 1 of their papers we have counts for

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cond-mat.mtrl-sci2010★ 49 cited

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Iftekhar Chowdhury, MVS Chandrasekhar, Paul B Klein +2

Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the…