3 papers
cond-mat.mes-hall2010
Intrinsic Reliability improvement in Biaxially Strained SiGe p-MOSFETs
Shweta Deora, Abhijeet Paul, R. Bijesh +5
In this letter we not only show improvement in the performance but also in the reliability of 30nm thick biaxially strained SiGe (20%Ge) channel on Si p-MOSFETs. Compared to Si cha…
cond-mat.mes-hall2010
Effects of Parasitics and Interface Traps On Ballistic Nanowire FET In The Ultimate Quantum Capacitance Limit
Kausik Majumdar, Navakanta Bhat, Prashant Majhi +1
In this paper, we focus on the performance of a nanowire Field Effect Transistor (FET) in the Ultimate Quantum Capacitance Limit (UQCL) (where only one subband is occupied) in the…
cond-mat.mes-hall2010
HFinFET: A Scalable, High Performance, Low Leakage Hybrid N-Channel FET
Kausik Majumdar, Prashant Majhi, Navakanta Bhat +1
In this letter we propose the design and simulation study of a novel transistor, called HFinFET, which is a hybrid of a HEMT and a FinFET, to obtain excellent performance and good…