3 papers
cond-mat.supr-con2011
Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography
K. Hoummada, F. Dahlem, T. Kociniewski +7
Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical co…
cond-mat.supr-con2010
Subkelvin tunneling spectroscopy showing Bardeen-Cooper-Schrieffer superconductivity in heavily boron-doped silicon epilayers
F. Dahlem, T. Kociniewski, C. Marcenat +8
Scanning tunneling spectroscopies in the subKelvin temperature range were performed on superconducting Silicon epilayers doped with Boron in the atomic percent range. The resulting…
cond-mat.supr-con2009
Low temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers
C. Marcenat, J. Kacmarcik, R. Piquerel +11
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentratio…