2 papers
cond-mat.mes-hall2011
Efficient single-photon emission from electrically driven InP quantum dots epitaxially grown on Si(001)
M. Wiesner, W. -M. Schulz, C. Kessler +4
The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applicatio…
cond-mat.mtrl-sci2008
InP-quantum dots in Al0.20Ga0.80InP with different barrier configurations
Wolfgang-Michael Schulz, Robert Rossbach, Matthias Reischle +3
Systematic ensemble photoluminescence studies have been performed on type-I InP-quantum dots in Al0.20Ga0.80InP barriers, emitting at approximately 1.85 eV at 5 K. The influence of…