High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy

MVS Chandrashekhar, Iftekhar Chowdhury, P. Kaminski +3

Thick, high-purity semi-insulating (SI)homoepitaxial layers on Si-face 4H-SiC weregrownsystematically, with resistivity \geq 109Ω-cmby maintaining high C/Si ratios 1.3-15 during gr…