2 papers
cond-mat.mes-hall2011
Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe
A. S. Gurevich, V. P. Kochereshko, J. Bleuse +3
Existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is evidenced experimentally by ellipsometry and photolu…
cond-mat.mes-hall2006
Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells
N. S. Averkiev, L. E. Golub, A. S. Gurevich +5
Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins orien…