most citedRoom Temperature Device Performance of Electrodeposited InSb Nanowire Field Effect Transistors

34 citations · 34 across the 1 of their papers we have counts for

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cond-mat.mes-hall2011★ 34 cited

Room Temperature Device Performance of Electrodeposited InSb Nanowire Field Effect Transistors

Suprem R. Das, Collin J. Delker, Dmitri Zakharov +3

In this study, InSb nanowires have been formed by electrodeposition and integrated into NW-FETs. NWs were formed in porous anodic alumina (PAA) templates, with the PAA pore diamete…