activity
20002011
collaborators

5 papers

cond-mat.mes-hall2011

Influence of the heterointerface sharpness on exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap

T. S. Shamirzaev, J. Debus, D. S. Abramkin +7

The dynamics of exciton recombination in an ensemble of indirect band-gap (In,Al)As/AlAs quantum dots with type-I band alignment is studied. The lifetime of confined excitons which…

cond-mat.mes-hall2006

Pauli blockade of the electron spin flip in bulk GaAs

A. Amo, L. Vina, P. Lugli +3

By means of time-resolved optical orientation under strong optical pumping, the k-dependence of the electron spin-flip time (t_sf) in undoped GaAs is experimentally determined. t_s…

cond-mat.mtrl-sci2005

Interplay of the exciton and electron-hole plasma recombination on the photoluminescence dynamics in bulk GaAs

A. Amo, M. D. Martin, L. Vina +2

We present a systematic study of the exciton/electron-hole plasma photoluminescence dynamics in bulk GaAs for various lattice temperatures and excitation densities. The competition…

cond-mat.mtrl-sci2004

Influence of Trapping on the Exciton Dynamics of Al_xGa_1-xAs Films

A. Amo, M. D. Martin, L. Klopotowski +3

We present a systematic study on the exciton relaxation in high purity AlGaAs epilayers. The time for the excitonic photoluminescence to reach its maximum intensity (t_max) shows a…

cond-mat.mes-hall2000

Kinetics of exciton photoluminescence in type-II semiconductor superlattices

L. S. Braginsky, M. Yu. Zaharov, A. M. Gilinsky +3

The exciton decay rate at a rough interface in type-II semiconductor superlattices is investigated. It is shown that the possibility of recombination of indirect excitons at a plan…