127 citations · 154 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2011★ 27 cited
Ab initio calculation of Effective Work Functions for a TiN/HfO2/SiO2/Si transistor stack
Pierre-Yves Prodhomme, Fabien Fontaine-Vive, Abraam vand Der Geest +2
Ab initio techniques are used to calculate the effective work function (Weff) of a TiN/HfO2/SiO2/Si stack representing a metal-oxide-semiconductor (MOS) transistor gate taking into…
physics.chem-ph2011★ 127 cited
Free-energy profiles along reduction pathways of MoS2 M-edge and S-edge by dihydrogen: a first-principles study
Pierre-Yves Prodhomme, Pascal Raybaud, Hervé Toulhoat
We present the results of DFT calculations of free energy profiles along the reaction pathways starting from 50% coverage of MoS2 M-edge and 100% coverage of S-edge by sulfur, and…