476 citations · 485 across the 6 of their papers we have counts for
6 papers
Bipolar Charge Plasma Transistor: A Novel Three Terminal Device
M. Jagadesh Kumar, Kanika Nadda
A distinctive approach for forming a lateral Bipolar Charge Plasma Transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce…
Investigation of the Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field Effect Transistor
Sneh Saurabh, M. Jagadesh Kumar
In this paper, we propose the application of a Dual Material Gate (DMG) in a Tunnel Field Effect Transistor (TFET) to simultaneously optimize the on-current, the off-current and th…
Analytical Drain Current Model of Nanoscale Strained-Si/SiGe MOSFETs for Analog Circuit Simulation
Vivek Venkataraman, Susheel Nawal, M. Jagadesh Kumar
For nanoscale CMOS applications, strained-silicon devices have been receiving considerable attention owing to their potential for achieving higher performance and compatibility wit…
A New Dual-Material Double-Gate (DMDG) Nanoscale SOI MOSFET - Two-dimensional Analytical Modeling and Simulation
G. Venkateshwar Reddy, M. Jagadesh Kumar1
In this paper, we present the unique features exhibited by modified asymmetrical Double Gate (DG) silicon on insulator (SOI) MOSFET. The proposed structure is similar to that of th…
Leakage Current Reduction Techniques in Poly-Si TFTs for Active Matrix Liquid Crystal Displays:A Comprehensive Study
Ali A. Orouji, M. Jagadesh Kumar
This paper critically examines the leakage current reduction techniques for improving the performance of poly-Si TFTs used in active matrix liquid crystal displays. This is a first…
Controlling Short-channel Effects in Deep Submicron SOI MOSFETs for Improved Reliability: A Review
Anurag Chaudhry, M. Jagadesh Kumar
This paper examines the performance degradation of a MOS device fabricated on silicon-on-insulator (SOI) due to the undesirable short-channel effects (SCE) as the channel length is…